IndiumV3, Main, Repository, bibRecord, 011990

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

Identifieur interne : 011990 ( Main/Repository ); précédent : 011989; suivant : 011991

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

Auteurs : RBID : Pascal:01-0020283

Descripteurs français

Pascal (Inist)
- 7866F, 4250H, 8105E, 8560J, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Photoluminescence, Effet piézooptique, Déplacement spectral, Déplacement vers le rouge, Effet Stark confinement quantique.

English descriptors

KwdEn :
- Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Photoluminescence, Piezo-optical effects, Quantum confined Stark effect, Red shift, Semiconductor quantum wells, Spectral shift, Wide band gap semiconductors.

Abstract

Direct application of biaxial strain to GaN and InGaN/GaN multiple quantum-well (MQW) structures is achieved through the use of a specially designed pressure cell. The photoluminescence of the samples is measured as a function of the applied biaxial strain. The luminescence of the GaN sample redshifts with tensile strain in a manner that agrees quantitatively with the expected shrinkage of the energy gap. The luminescence of the InGaN MQW structures shows a smaller than expected redshift for one sample, and a blueshift for another. This blueshift agrees with calculations based on the built-in electric field and the piezoelectric effect in a quantum well in which the radiative recombination is dominated by the quantum-confined Stark effect.

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<front><div type="abstract" xml:lang="en">Direct application of biaxial strain to GaN and InGaN/GaN multiple quantum-well (MQW) structures is achieved through the use of a specially designed pressure cell. The photoluminescence of the samples is measured as a function of the applied biaxial strain. The luminescence of the GaN sample redshifts with tensile strain in a manner that agrees quantitatively with the expected shrinkage of the energy gap. The luminescence of the InGaN MQW structures shows a smaller than expected redshift for one sample, and a blueshift for another. This blueshift agrees with calculations based on the built-in electric field and the piezoelectric effect in a quantum well in which the radiative recombination is dominated by the quantum-confined Stark effect.</div>
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Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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